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DMG3414U
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
* Low On-Resistance * 25m @ VGS = 4.5V * 29m @ VGS = 2.5V * 37m @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate)
NEW PRODUCT
* * * * * *
Drain
D
Gate
Source
G
TOP VIEW
S
TOP VIEW
Internal Schematic
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS TA = 25C TA = 70C ID IDM Value 20 8 4.2 3.2 30 Units V V A A
Continuous Drain Current (Note 3) Pulsed Drain Current (Note 4)
Steady State
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 0.78 162 -55 to +150
Unit W C/W C
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t 10s. 4. Repetitive rating, pulse width limited by junction temperature.
DMG3414U
Document number: DS31739 Rev. 3 - 2
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(c) Diodes Incorporated
DMG3414U Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf Min 20 0.5 Typ 19 22 28 7 829.9 85.3 81.2 9.6 1.5 3.5 8.1 8.3 40.1 9.6 Max 1.0 100 0.9 25 29 37 Unit V A nA V m S pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 8.2A VGS = 2.5V, ID = 3.3A VGS = 1.8V, ID = 2.0A VDS = 10V, ID = 4A VDS = 10V, VGS = 0V f = 1.0MHz
TJ = 25C
NEW PRODUCT
VGS = 4.5V, VDS = 10V, ID = 8.2A
VDD = 10V, VGS = 4.5V, RL = 10, RG = 6, ID = 1A
5. Short duration pulse test used to minimize self-heating effect.
25
20
20 ID, DRAIN CURRENT (A)
VGS = 10V VGS = 4.5V
16 ID, DRAIN CURRENT (A)
VDS = -5V
15
VGS = 3.0V VGS = 2.5V VGS = 2.0V
12
10
VGS = 1.5V
8
5
T A = 150C
4
TA = 125C
T A = 85C TA = 25C TA = -55C
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 2
0 0.5
1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
2
DMG3414U
Document number: DS31739 Rev. 3 - 2
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May 2009
(c) Diodes Incorporated
DMG3414U
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
VGS = 4.5V
0.04
TA = 150C TA = 125C TA = 85C T A = 25C
0.04
0.03
NEW PRODUCT
0.03
VGS = 1.8V
0.02
VGS = 2.5V
0.02
TA = -55C
VGS = 4.5V
0.01
0.01 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20
0 0 4 8 12 16 ID, DRAIN CURRENT (A) 20
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.05 RDSON , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.8 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.6
VGS = 2.5V ID = 5A
0.04
VGS = 2.5V ID = 5A
1.4
0.03
1.2
VGS = 4.5V ID = 6.5A
0.02
VGS = 4.5V ID = 6.5A
1.0
0.8
0.01
0.6 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 6 On-Resistance Variation with Temperature
1.0 VGS(TH), GATE THRESHOLD VOLTAGE (V)
10
IS, SOURCE CURRENT (A)
TA = 25C
0.8
ID = 250A
1
0.6
0.1
0.4 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.01 0.4
0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current
1.0
DMG3414U
Document number: DS31739 Rev. 3 - 2
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May 2009
(c) Diodes Incorporated
DMG3414U
10,000 100,000
T A = 150C
IDSS, LEAKAGE CURRENT (nA)
10,000
T A = 125C
C, CAPACITANCE (pF)
1,000
Ciss
1,000
T A = 85C
NEW PRODUCT
100
TA = 25C
100
Coss Crss
10
TA = -55C
10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
1 20 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 166C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number DMG3414U-7
Notes:
(Note 6) Case SOT-23 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MN8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)
MN8
Date Code Key Year Code Month Code
2009 W Jan 1 Feb 2
2010 X Mar 3 Apr 4
2011 Y May 5 Jun 6
YM
2012 Z Jul 7
2013 A Aug 8 Sep 9
2014 B Oct O Nov N
2015 C Dec D May 2009
(c) Diodes Incorporated
DMG3414U
Document number: DS31739 Rev. 3 - 2
4 of 6 www.diodes.com
DMG3414U
Package Outline Dimensions
A
NEW PRODUCT
BC
H K D J F G L M
K1
SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z
C
Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
X
E
DMG3414U
Document number: DS31739 Rev. 3 - 2
5 of 6 www.diodes.com
May 2009
(c) Diodes Incorporated
DMG3414U
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMG3414U
Document number: DS31739 Rev. 3 - 2
6 of 6 www.diodes.com
May 2009
(c) Diodes Incorporated

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